What is the development history, specific uses and structure of the chip

This is near 50 The development curve of chip manufacturing in recent years , The first of these uses 1 Ten thousand nanometers CPU It's Intel 4004, First adoption 5 Nano is made by the fruit company A14, Let's talk about what the city of chips is , That is what we call seven nanometers 、 Ten nanometers , What exactly do these mean ？ And what technology they all use ？

These processes can be roughly divided into two categories , stay 22 Before nano , The planar transistor process is adopted , and 22 Nano to the present 5 nanometer , It's using 3D Transistor technology .

You see , This is a planar transistor , This is his source , This is the drain , This is its power channel , This is the insulation , This is the grid , When we apply voltage to the grid ,MOS The pipe is open , Electrons flow from the source to the drain , That is to say, the manufacturing process is the length of the channel .

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For example, this channel is 90 Nano , We say that this chip uses 90 Nanofabrication , Although this is a planar transistor , But its structure is also three-dimensional , The reason why it is a planar transistor , It is because it uses the plane technology , The surface of the chip looks flat , So this is a planar transistor .

The reason why there was 3D The transistor , The reason is that the planar transistor can no longer meet the requirement of shortening the transistor , When the chip manufacturing process is reduced to 22 Nano time , Because the channel is too short , It is difficult to turn off the grid completely , Because the shorter the channel , The worse the ability of the grid to control the channel , At this time, even after removing the grid voltage , He still has a large leakage current .

In order to turn off the short channel transistor , Professor huzhengming from Taiwan invented the fin field effect transistor , also called Finfat, This is a kind of 3D The transistor ,Finfat The principle is to make these semiconductors thinner , Then it bulges upwards , Then let the gate surround the conductive channel , In this way, the contact surface area is larger , After thinning, the switching speed of the transistor can be increased , And reduce leakage current , At the same time, the grid length can be shortened .

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In order to further increase the switching speed and improve the leakage current , Its conductive channels can also be divided into three parts , This makes it easier to turn off , This is the great invention of the fin transistor by Professor huzhengming , The reason why fin transistor , Because the bulge on the back of it looks like a fin .

When the production is less than 22 Nano time , There is confusion in the naming of semiconductor processes , Each semiconductor manufacturer emphasizes that there is no standard for manufacturing , At this time, nano manufacturing is just a commercial name , It does not represent the physical size of the transistor .

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