edit ：ll
20N10-ASEMI Medium and low pressure MOS tube 20N10
model ：20N10
brand ：ASEMI
encapsulation ：TO-22AB
Maximum leakage current ：20A
Leakage source breakdown voltage ：100V
RDS（ON）Max：0.12Ω
Number of pins ：3
Number of chips ：
Channel type ：N Ditch MOS tube
Leakage current ：ua
characteristic ：N Ditch MOS tube 、 Field effect tube
working temperature ：-55℃~150℃
Popular 20N10 MOS tube
ASEMI brand 20N10 It's a process chip , The chip has good stability and impact resistance , Can continue to ensure 20N10 Maximum drain source current of 20A, Leakage source breakdown voltage 100V.
• Details reflect the gap
20N10,ASEMI brand , Process chip , Process manufacturing , The product has high stability , Strong shock resistance .
20N10 The specific parameters are ： Maximum leakage current ：20A, Leakage source breakdown voltage ：100V, Reverse recovery time ： ns, encapsulation ：TO-220AB
