Asemi fast recovery diode us1m parameters, us1m recovery time, us1m voltage drop

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ASEMI Fast recovery diode US1M Parameters ：

model ：US1M

Maximum repetitive peak reverse voltage （VRRM）：1000V

Maximum RMS Bridge input voltage （VRMS）：700V

Maximum DC blocking voltage （VDC）：1000V

Maximum average forward rectified output current （IF(AV)）：1.0A

Peak forward surge current （IFSM）：30A

Typical thermal resistance of each element （ReJA）：88℃/W

Typical junction capacitance of each element （Cj）：15pF

Working junction and storage temperature range （TJ, TSTG）：-55 to +150℃

Maximum instantaneous forward pressure drop （VF）：1.7V

Maximum DC reverse current （IR）：5uA

Maximum reverse recovery time （trr）：100ns

 

US1M features ：

Plastic packaging ensures laboratory flammability classification 94V-0

Built in stress relief device , Ideal for automatic placement

Glass passivated chip junction

Fast switching for high efficiency

High temperature welding assurance 260/10 second

US1M Mechanical data ：

Shell ：JEDED DO-214AC Molded plastic glass passivated chip

terminal ： Plating welding , Weldable in accordance with MIL-STD-750, Method 2026

Polarity ： The color band indicates the extreme of Yin

Lead wire ： Electroplated axial lead , According to the MIL-STD-202E Method welding

weight ：0.002 Oz. ,0.064 g