Can the asemi fast recovery diodes RS1M, us1m and US1G be replaced with each other

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ASEMI Fast recovery diode RS1M、US1M and US1G Can we substitute for each other ？ This should be considered in terms of their encapsulation and parameters , Let's see RS1M、US1M and US1G Comparison of various parameters of ：

RS1M Parameters to describe

model ：RS1M

encapsulation ：SMA

Peak repetitive reverse voltage （VRRM）：1000V

Average rectified forward current （IF）：1A

Non repetitive peak surge current （IFSM）：30A

Maximum instantaneous forward voltage （VF）：1.3V

Maximum instantaneous reverse current （IR）：5uA

Maximum reverse recovery time （trr）：500NS

Working junction temperature and storage temperature （TJ, Tstg）：-55~ +150℃

 

US1M Parameters to describe

model ：US1M

encapsulation ：SMA

Peak repetitive reverse voltage （VRRM）：1000V

Average rectified forward current （IF）：1A

Non repetitive peak surge current （IFSM）：30A

Maximum instantaneous forward voltage （VF）：1.7V

Maximum instantaneous reverse current （IR）：5uA

Maximum reverse recovery time （trr）：100NS

Working junction temperature and storage temperature （TJ, Tstg）：-55~ +150℃

 

US1G Parameters to describe

model ：US1G

encapsulation ：SMA

Peak repetitive reverse voltage （VRRM）：400V

Average rectified forward current （IF）：1A

Non repetitive peak surge current （IFSM）：30A

Maximum instantaneous forward voltage （VF）：1.3V

Maximum instantaneous reverse current （IR）：5uA

Maximum reverse recovery time （trr）：50NS

Working junction temperature and storage temperature （TJ, Tstg）：-55~ +150℃

 

First RS1M、US1M and US1G The packaging is the same , Then we can refer to the parameters RS1M、US1M and US1G Can I replace it , They have the same current , But the reverse withstand voltage is different , Large withstand voltage can replace small withstand voltage , Not vice versa , And the recovery time is different , If the frequency is required, the fast recovery time can replace the slow recovery time , Not the other way around .